Syntheses, crystal structure and physical properties of new Zintl phases Ba{sub 3}T{sub 2}As{sub 4} (T=Zn, Cd)
- State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)
Through high temperature Pb-flux reactions, two new arsenide Zintl compounds, Ba{sub 3}Zn{sub 2}As{sub 4} and Ba{sub 3}Cd{sub 2}As{sub 4}, were successfully obtained and their structures were accurately determined with Single-Crystal X-ray Diffraction. Both compounds are isotypic to Ba{sub 3}Cd{sub 2}Sb{sub 4} and crystallize in the monoclinic space group C2/m (No=12) with cell parameters of a=16.916(4)/17.089(3) A, b=4.497(1)/4.6076(7) A, c=7.225(2)/7.304(1) A and {beta}=113.147(2)/112.312(1) Degree-Sign for Ba{sub 3}Zn{sub 2}As{sub 4} and Ba{sub 3}Cd{sub 2}As{sub 4}, respectively. Electrical resistivity measurement on Ba{sub 3}Cd{sub 2}As{sub 4} reveals semiconducting behavior between 10 and 100 K, which results in a very small band gap of 0.01 eV. According to TG/DSC analyses, Ba{sub 3}Cd{sub 2}As{sub 4} exhibits good thermal stability and does not decompose below 950 K. - Graphic abstract: A polyhedral view of the crystal structure for Ba{sub 3}T{sub 2}As{sub 4} (T=Zn or Cd) in which Ba and As atoms are plotted as purple and red spheres, respectively. Highlights: Black-Right-Pointing-Pointer Two new ternary Zintl compounds, Ba{sub 3}Zn{sub 2}As4 and Ba{sub 3}Cd{sub 2}As{sub 4}, have been synthesized. Black-Right-Pointing-Pointer Their structure features polyanionic layers constructed through [MAs{sub 4}] tetrahedra. Black-Right-Pointing-Pointer Ba{sub 3}Cd{sub 2}As{sub 4} has a very narrow band gap of 0.01 eV and are thermally stable up to 950 K.
- OSTI ID:
- 22149991
- Journal Information:
- Journal of Solid State Chemistry, Vol. 198; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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