Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells
- a National Technical University 'Kharkiv Polytechnic Institute' (Ukraine)
- Zhukovsky National Aerospace University 'Kharkiv Aviation Institute' (Ukraine)
The conditions of the bonding of silicon multijunction solar cells with vertical p-n junctions using Ag-In solder are studied. The compositions of electrodeposited indium films on silicon wafers silver plated by screen printing and silver and indium films fabricated by layer-by-layer electrochemical deposition onto the surface of silicon vertical diode cells silver plated in vacuum are studied. Studying the electrochemical-deposition conditions, structure, and surface morphology of the grown layers showed that guaranteed bonding is provided by 8-min heat treatment at 400 Degree-Sign C under the pressure of a stack of metallized silicon wafers; however, the ratio of the indium and silver layer thicknesses should not exceed 1: 3. As this condition is satisfied, the solder after wafer bonding has the InAg{sub 3} structure (or InAg{sub 3} with an Ag phase admixture), due to which the junction melting point exceeds 700 Degree-Sign C, which guarantees the functioning of such solar cells under concentrated illumination.
- OSTI ID:
- 22126502
- Journal Information:
- Semiconductors, Vol. 47, Issue 6; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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