Electron mobilities in isomorphic In{sub 0.53}Ga{sub 0.47}As quantum wells on InP substrates

Journal Article · Wed May 15 00:00:00 EDT 2013 · Journal of Experimental and Theoretical Physics

DOI:https://doi.org/10.1134/S1063776113050063· OSTI ID:22126490

Lunin, R. A.; Yuzeeva, N. A. ^[1]; Vasil'evskii, I. S. ^[2]; Galiev, G. B.; Klimov, E. A. ^[3]

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1. Moscow State University (Russian Federation)
2. MIFI National Nuclear University (Russian Federation)
3. Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)

The influence of the doping level, illumination, and width of isomorphic In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum wells grown on InP substrates on the electron mobility is studied. The persistent photoconductivity at low temperatures is found. Band diagrams are calculated and optimal parameters are found for obtaining the maximum electron mobility. The quantum and transport electron mobilities in dimensional quantization subbands are obtained from the Shubnikov-de Haas effect. The electron mobilities are calculated in dimensional quantization subbands upon scattering by ionized impurities taking intersubband transitions into account. Scattering by ionized impurities in samples studied is shown to be dominant at low temperatures.

• OSTI ID: 22126490
• Journal Information: Journal of Experimental and Theoretical Physics, Vol. 116, Issue 5; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
ILLUMINANCE
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PHOTOCONDUCTIVITY
QUANTIZATION
QUANTUM WELLS
SCATTERING
SHUBNIKOV-DE HAAS EFFECT
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K