Anomalous thermal expansion of InSe layered semiconductors in the low-temperature region
Journal Article
·
· Journal of Experimental and Theoretical Physics
- Moscow State University (Russian Federation)
- Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
The temperature dependence of the linear thermal expansion coefficient (TEC) of an InSe single crystal in the (001) plane is measured in the temperature range 7-50 K. A peak in the thermal expansion is detected near T = 10 K, after which the sample shrinks upon heating. The effect of an external magnetic field of up to 6 T, which is parallel to the (001) plane, on the TEC is investigated. The observed partial suppression of the peak and crystal compression by the field indicates the relation of these anomalies to possible electron ordering in InSe layers.
- OSTI ID:
- 22126469
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 116, Issue 5; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low-temperature photoluminescence of n-InSe layer semiconductor crystals
Features of the Electron Mobility in the n-InSe Layered Semiconductor
Thermal expansion of GaN at low temperatures -- A comparison of bulk and homo- and heteroepitaxial layers
Journal Article
·
Tue Sep 01 00:00:00 EDT 1998
· Materials Research Bulletin
·
OSTI ID:22126469
Features of the Electron Mobility in the n-InSe Layered Semiconductor
Journal Article
·
Sat Dec 15 00:00:00 EST 2018
· Semiconductors
·
OSTI ID:22126469
Thermal expansion of GaN at low temperatures -- A comparison of bulk and homo- and heteroepitaxial layers
Conference
·
Sat Jul 01 00:00:00 EDT 2000
·
OSTI ID:22126469
+3 more