High-power cw laser bars of the 750 - 790-nm wavelength range

Degtyareva, N S; Kondakov, S A; Mikayelyan, G T; Gorlachuk, P V; Ladugin, M A; Marmalyuk, Aleksandr A; Ryaboshtan, Yu L; Yarotskaya, I V

doi:10.1070/QE2013V043N06ABEH015154

Title: High-power cw laser bars of the 750 - 790-nm wavelength range

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Abstract

We have developed the effective design of semiconductor heterostructures, which allow one to fabricate cw laser diodes emitting in the 750 - 790-nm spectral range. The optimal conditions for fabrication of GaAsP/AlGaInP/GaAs heterostructures by MOCVD have been determined. It is shown that the use of quantum wells with a precisely defined quantity mismatch reduces the threshold current density and increases the external differential efficiency. The results of studies of characteristics of diode laser bars fabricated from these heterostructures are presented. (lasers)

Authors:: Degtyareva, N S; Kondakov, S A; Mikayelyan, G T; Gorlachuk, P V; Ladugin, M A; Marmalyuk, Aleksandr A; Ryaboshtan, Yu L; Yarotskaya, I V

Publication Date:: Sun Jun 30 00:00:00 EDT 2013

OSTI Identifier:: 22122899

Resource Type:: Journal Article

Journal Name:: Quantum Electronics (Woodbury, N.Y.)

Additional Journal Information:: Journal Volume: 43; Journal Issue: 6; Other Information: Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7818

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; GALLIUM ARSENIDES; LASERS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; THRESHOLD CURRENT; WAVELENGTHS

Citation Formats


                    Degtyareva, N S, Kondakov, S A, Mikayelyan, G T, Gorlachuk, P V, Ladugin, M A, Marmalyuk, Aleksandr A, Ryaboshtan, Yu L, and Yarotskaya, I V. High-power cw laser bars of the 750 - 790-nm wavelength range.  United States: N. p., 2013. 
        Web.  doi:10.1070/QE2013V043N06ABEH015154.

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                    Degtyareva, N S, Kondakov, S A, Mikayelyan, G T, Gorlachuk, P V, Ladugin, M A, Marmalyuk, Aleksandr A, Ryaboshtan, Yu L, & Yarotskaya, I V. High-power cw laser bars of the 750 - 790-nm wavelength range.  United States.  https://doi.org/10.1070/QE2013V043N06ABEH015154

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                    Degtyareva, N S, Kondakov, S A, Mikayelyan, G T, Gorlachuk, P V, Ladugin, M A, Marmalyuk, Aleksandr A, Ryaboshtan, Yu L, and Yarotskaya, I V. 2013.  
        "High-power cw laser bars of the 750 - 790-nm wavelength range".  United States.  https://doi.org/10.1070/QE2013V043N06ABEH015154.

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@article{osti_22122899,

  title        = {High-power cw laser bars of the 750 - 790-nm wavelength range},

  author       = {Degtyareva, N S and Kondakov, S A and Mikayelyan, G T and Gorlachuk, P V and Ladugin, M A and Marmalyuk, Aleksandr A and Ryaboshtan, Yu L and Yarotskaya, I V},

  abstractNote = {We have developed the effective design of semiconductor heterostructures, which allow one to fabricate cw laser diodes emitting in the 750 - 790-nm spectral range. The optimal conditions for fabrication of GaAsP/AlGaInP/GaAs heterostructures by MOCVD have been determined. It is shown that the use of quantum wells with a precisely defined quantity mismatch reduces the threshold current density and increases the external differential efficiency. The results of studies of characteristics of diode laser bars fabricated from these heterostructures are presented. (lasers)},

  doi          = {10.1070/QE2013V043N06ABEH015154},

  url          = {https://www.osti.gov/biblio/22122899},
  journal      = {Quantum Electronics (Woodbury, N.Y.)},

  issn         = {1063-7818},

  number       = 6,

  volume       = 43,

  place        = {United States},

  year         = {Sun Jun 30 00:00:00 EDT 2013},

  month        = {Sun Jun 30 00:00:00 EDT 2013}

}

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