Passivation of In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces by AlN atomic layer deposition process

Journal Article · Sun Jul 21 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4815934· OSTI ID:22122843

Weiland, C.; Woick, J. C. ^[1]; Rumaiz, A. K. ^[2]; Price, J.; Lysaght, P. ^[3]

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1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
2. National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)
3. SEMATECH, 257 Fuller Road, Albany, New York 12203 (United States)

Reducing defects at III-V/high-k interfaces is essential for optimizing devices built on these materials. Here, the role of an interfacial AlN process at In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces is investigated by hard x-ray photoelectron spectroscopy (HAXPES) and capacitance/voltage (C-V) measurements. C-V measurements show a significant reduction in the density of interface traps with the interfacial AlN process and a capping TiN layer. To elucidate the specific role of the AlN process, blanket films with various deposition processes are compared. The AlN process alone (without subsequent dielectric deposition) reduces InGaAs oxide levels below the HAXPES detection limit, even though the AlN is ultimately found to be oxidized into AlO{sub x} with only trace N incorporation, yet AlN passivation provides a lower D{sub it} (density of interface traps) when compared with an H{sub 2}O-based Al{sub 2}O{sub 3} deposition. The AlN process does not passivate against re-oxidation of the InGaAs during an O{sub 3} based ZrO{sub 2} deposition process, but it does provide passivation against As-As development during subsequent TiN deposition. The role of chemical defects in the C-V characteristics is also discussed.

• OSTI ID: 22122843
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
CRYSTAL DEFECTS
DIELECTRIC MATERIALS
EQUIPMENT
FILMS
GALLIUM ARSENIDES
HARD X RADIATION
INDIUM ARSENIDES
INTERFACES
LAYERS
OXIDATION
PASSIVATION
SEMICONDUCTOR MATERIALS
SENSITIVITY
TITANIUM NITRIDES
WATER
X-RAY PHOTOELECTRON SPECTROSCOPY
ZIRCONIUM OXIDES