Tuning the formation of p-type defects by peroxidation of CuAlO{sub 2} films

Journal Article · Sun Jul 21 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4816044· OSTI ID:22122840

Luo, Jie; Lin, Yow-Jon; Yang, Yao-Wei ^[1]; Hung, Hao-Che; Liu, Chia-Jyi ^[2]

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1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
2. Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China)

p-type conduction of CuAlO{sub 2} thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (V{sub Cu}), and interstitial oxygen (O{sub i}) was established. It is shown that peroxidation of CuAlO{sub 2} films may lead to the increased formation probability of acceptors (V{sub Cu} and O{sub i}), thus, increasing the hole concentration. The dependence of the V{sub Cu} density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO{sub 2}. Understanding the defect-related p-type conductivity of CuAlO{sub 2} is essential for designing optoelectronic devices and improving their performance.

• OSTI ID: 22122840
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
CONCENTRATION RATIO
COPPER COMPOUNDS
CRYSTAL DEFECTS
CRYSTALS
DENSITY
DEPOSITION
DESIGN
INTERSTITIALS
OXYGEN
PERFORMANCE
SEMICONDUCTOR MATERIALS
SPECTROMETERS
SPUTTERING
THIN FILMS
VACANCIES
X RADIATION
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY