Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO{sub 3} thin films

Journal Article · Sun Jul 14 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4812219· OSTI ID:22122811

Au, K.; Wang, Juan; Bao, Z. Y.; Dai, J. Y. ^[1]; Gao, X. S. ^[2]; Liu, J. M. ^[3]

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1. Department of Applied Physics, Hong Kong Polytechnic University (Shenzhen Research Institute) (Hong Kong)
2. Department of Applied Physics, The Hong Kong Polytechnic University (Shenzhen Research Institute) (Hong Kong)
3. Institute for Advanced Materials, South China Normal University, Guangzhou (China)

Ag nanoparticle (NP) embedded BaTiO{sub 3} (BTO) thin films on SrRuO{sub 3}-coated SrTiO{sub 3} (STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 10{sup 4}, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.

• OSTI ID: 22122811
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 2; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM COMPOUNDS
COMPOSITE MATERIALS
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
FILAMENTS
LASER RADIATION
LAYERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PULSED IRRADIATION
RANDOMNESS
SILVER
STRONTIUM TITANATES
SUBSTRATES
SWITCHES
THIN FILMS
TITANATES