Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

Journal Article · Mon Jul 01 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4813016· OSTI ID:22122781

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun ^[1]

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1. Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

• OSTI ID: 22122781
• Journal Information: Applied Physics Letters, Vol. 103, Issue 1; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM OXIDES
DEPOSITION
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRONIC EQUIPMENT
GRAPHENE
LIMITING VALUES
NANOSTRUCTURES
NITROGEN
PLASMA
THIN FILMS
TRANSISTORS
TRAPPING