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Title: Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

Abstract

A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

Authors:
 [1]
  1. Voronezh State University (Russian Federation)
Publication Date:
OSTI Identifier:
22121711
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; DISTRIBUTION; EDDY CURRENTS; ELECTRIC FIELDS; ELECTRONS; MAGNETIC FIELDS; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS

Citation Formats

Filippov, V. V., E-mail: wwfilippow@mail.ru, and Bormontov, E. N. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field. United States: N. p., 2013. Web. doi:10.1134/S1063782613070063.
Filippov, V. V., E-mail: wwfilippow@mail.ru, & Bormontov, E. N. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field. United States. https://doi.org/10.1134/S1063782613070063
Filippov, V. V., E-mail: wwfilippow@mail.ru, and Bormontov, E. N. 2013. "Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field". United States. https://doi.org/10.1134/S1063782613070063.
@article{osti_22121711,
title = {Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field},
author = {Filippov, V. V., E-mail: wwfilippow@mail.ru and Bormontov, E. N.},
abstractNote = {A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.},
doi = {10.1134/S1063782613070063},
url = {https://www.osti.gov/biblio/22121711}, journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 47,
place = {United States},
year = {Mon Jul 15 00:00:00 EDT 2013},
month = {Mon Jul 15 00:00:00 EDT 2013}
}