Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

Rogl, P.; Romaka, V. V.; Stadnyk, Yu. V.; Hlil, E. K.; Krajovskii, V. Ya.; Horyn, A. M.

doi:10.1134/S1063782613070208

Title: Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

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Abstract

The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni{sub 1+x} atoms in tetrahedral interstices of the crystal structure of the semiconductor is found and the donor nature of such structural defects that change the properties of the semiconductor is established. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and strongly compensated semiconductor.

Authors:

Rogl, P. ^[1]; Romaka, V. V. ^[2]; Stadnyk, Yu. V. ^[3]; Hlil, E. K. ^[4]; Krajovskii, V. Ya. ^[2]; Horyn, A. M. ^[3]

Universitaet Wien, Institut fuer Physikalische Chemie (Austria)
National University Lvivska Politekhnika (Ukraine)
Ivan Franko National University of Lviv (Ukraine)
CNRS, Laboratoire de Neel (France)

Publication Date:: Mon Jul 15 00:00:00 EDT 2013

OSTI Identifier:: 22121710

Resource Type:: Journal Article

Journal Name:: Semiconductors

Additional Journal Information:: Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; BUILDUP; CRYSTAL STRUCTURE; DEFECTS; DISTRIBUTION; DOPED MATERIALS; ELECTRON DENSITY; IMPURITIES; MAGNETIC PROPERTIES; NICKEL; NICKEL ALLOYS; SEMICONDUCTOR MATERIALS; TIN ALLOYS; ZIRCONIUM ALLOYS

Citation Formats


                    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P., Romaka, V. V., Stadnyk, Yu. V., Hlil, E. K., Krajovskii, V. Ya., and Horyn, A. M. Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn.  United States: N. p., 2013. 
        Web.  doi:10.1134/S1063782613070208.

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                    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P., Romaka, V. V., Stadnyk, Yu. V., Hlil, E. K., Krajovskii, V. Ya., & Horyn, A. M. Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn.  United States.  https://doi.org/10.1134/S1063782613070208

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                    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P., Romaka, V. V., Stadnyk, Yu. V., Hlil, E. K., Krajovskii, V. Ya., and Horyn, A. M. 2013.  
        "Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn".  United States.  https://doi.org/10.1134/S1063782613070208.

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@article{osti_22121710,

  title        = {Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn},

  author       = {Romaka, V. A., E-mail: vromaka@polynet.lviv.ua and Rogl, P. and Romaka, V. V. and Stadnyk, Yu. V. and Hlil, E. K. and Krajovskii, V. Ya. and Horyn, A. M.},

  abstractNote = {The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni{sub 1+x} atoms in tetrahedral interstices of the crystal structure of the semiconductor is found and the donor nature of such structural defects that change the properties of the semiconductor is established. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and strongly compensated semiconductor.},

  doi          = {10.1134/S1063782613070208},

  url          = {https://www.osti.gov/biblio/22121710},
  journal      = {Semiconductors},

  issn         = {1063-7826},

  number       = 7,

  volume       = 47,

  place        = {United States},

  year         = {Mon Jul 15 00:00:00 EDT 2013},

  month        = {Mon Jul 15 00:00:00 EDT 2013}

}

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