Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613070129· OSTI ID:22121707

Yurtsenyuk, N. S.; Rarenko, I. M.; Sklyarchuk, V. M.; Sklyarchuk, O. F.; Zakharuk, Z. I.; Grushko, E. V. ^[1]

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1. Chernivtsi National University (Ukraine)

CdTe:Mn crystals with a resistivity of {approx}1 {Omega} cm at 300 K and Schottky diodes based on them are investigated. The electrical conductivity of the material and its temperature variations are explained in terms of the statistics of electrons and holes in semiconductors with allowance for the compensation processes. The ionization energy and the degree of compensation of the donors responsible for the conductivity are determined. It is shown that, in the case of forward connection and low reverse biases, the currents in Au/CdTe:Mn Schottky diode are determined by generation-recombination processes in the space-charge region. At higher reverse biases (above 1.5-2 V) the excess current is caused by electron tunneling from the metal to the semiconductor, and at even higher voltages (>6-7 V) an additional increase in the reverse current due to avalanche processes is observed.

• OSTI ID: 22121707
• Journal Information: Semiconductors, Vol. 47, Issue 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CHARGE TRANSPORT
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRONS
GOLD
HOLES
MANGANESE
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SPACE CHARGE
STATISTICS
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT