Epitaxial V{sub 0.6}W{sub 0.4}N/MgO(001): Evidence for ordering on the cation sublattice
- Thin Film Physics Division, Department of Physics (IFM), Linkoeping University, SE-58183 Linkoeping (Sweden)
V{sub 0.6}W{sub 0.4}N alloys are grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering from V and W targets in 10 mTorr pure-N{sub 2} atmospheres at temperatures T{sub s} ranging from 600 to 900 Degree-Sign C. Based on x-ray diffraction and transmission electron microscopy results, all films have the B1-NaCl crystal structure and grow with a cube-on-cube epitaxial relationship to the substrate, (001){sub VWN} Double-Vertical-Line (001){sub MgO} and [100]{sub VWN} Double-Vertical-Line [100]{sub MgO}. Rutherford backscattering spectrometry analyses show that the N content in V{sub 0.6}W{sub 0.4}N{sub x} alloys decreases with increasing T{sub s} from overstoichiometric with x = 1.13 at 600 Degree-Sign C, to approximately stoichiometric with x = 1.08 at 700 Degree-Sign C, to understoichiometric at 800 Degree-Sign C (x = 0.80) and 900 Degree-Sign C (x = 0.75). High-resolution scanning transmission electron microscopy, Z-contrast, and selected-area electron diffraction investigations of V{sub 0.6}W{sub 0.4}N(001) alloys grown at 600 and 700 Degree-Sign C reveal the onset of W ordering on adjacent 111 planes of the metal sublattice; no ordering is observed for understoichiometric films grown at higher temperatures.
- OSTI ID:
- 22121649
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 4; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates
Comparison of ohmic metallization schemes for InGaAlN
Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CATIONS
CUBIC LATTICES
DEPOSITION
ELECTRON DIFFRACTION
EPITAXY
FILMS
LAYERS
MAGNESIUM OXIDES
MAGNETRONS
NITROGEN ADDITIONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SPUTTERING
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN ALLOYS
VANADIUM ALLOYS
X-RAY DIFFRACTION