Simulation of ion beam transport through the 400 Kv ion implanter at Michigan Ion Beam Laboratory
- Department of Engineering and Radiological Sciences, University of Michigan, 2355 Bonisteel Boulevard, Ann Arbor, MI 48109-2104 (United States)
The Michigan Ion Beam Laboratory houses a 400 kV ion implanter. An application that simulates the ion beam trajectories through the implanter from the ion source to the target was developed using the SIMION Registered-Sign code. The goals were to have a tool to develop an intuitive understanding of abstract physics phenomena and diagnose ion trajectories. Using this application, new implanter users of different fields in science quickly understand how the machine works and quickly learn to operate it. In this article we describe the implanter simulation application and compare the parameters of the implanter components obtained from the simulations with the measured ones. The overall agreement between the simulated and measured values of magnetic fields and electric potentials is {approx}10%.
- OSTI ID:
- 22117039
- Journal Information:
- AIP Conference Proceedings, Vol. 1525, Issue 1; Conference: 22. international conference on application of accelerators in research and industry, Ft. Worth, TX (United States), 5-10 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
SIMION PC/PS2 electrostatic lens design program
Repetitively pulsed metal ion beams for ion implantation