Influence of RF power on magnetron sputtered AZO films

Journal Article · Tue Feb 05 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4791262· OSTI ID:22116026

Agarwal, Mohit; Modi, Pankaj; Dusane, R. O. ^[1]

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1. Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)

Al-doped Zinc Oxide (AZO) transparent conducting films are prepared on glass substrate by RF magnetron sputtering under different RF power with a 3 inch diameter target of 2 wt%Al{sub 2}O{sub 3} in zinc oxide. The effect of RF power on the structural, optical and electrical properties of AZO films was investigated by X-ray Diffraction (XRD), Hall measurement and UV-Visible spectrophotometry. The XRD data indicates a preferential c-axis orientation for all the films. All films exhibit high transmittance (<90%) in visible region. Films deposited at 60 W power exhibit lowest resistivity of 5.7 Multiplication-Sign 10{sup -4}{omega}cm. Such low-resistivity and high-transmittance AZO films when prepared using low RF power at room temperature could find important applications in flexible electronics.

• OSTI ID: 22116026
• Journal Information: AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CARRIER MOBILITY
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GLASS
HALL EFFECT
OPACITY
SEMICONDUCTOR MATERIALS
SPECTROPHOTOMETRY
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
X-RAY DIFFRACTION
ZINC OXIDES