Crystalline silicon growth in nickel/a-silicon bilayer

Journal Article · Tue Feb 05 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4791223· OSTI ID:22116019

Mohiddon, Md Ahamad; Naidu, K. Lakshun ^[1]; Dalba, G. ^[2]; Rocca, F. ^[3]; Krishna, M. Ghanashyam ^[4]

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1. School of Physics, University of Hyderabad, Hyderabad-500046 (India) and Department of Physics, University of Trento, 38123 POVO (Trento) (Italy)
2. Department of Physics, University of Trento, 38123 POVO (Trento) (Italy)
3. IFN-CNR, Institute for Photonics and Nanotechnologies, Unit FBK-Photonics of Trento, 38123, Trento (Italy)
4. School of Physics, University of Hyderabad, Hyderabad-500046 (India)

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 Degree-Sign C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

• OSTI ID: 22116019
• Journal Information: AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ANNEALING
CRYSTALLIZATION
ELECTRON BEAMS
ENERGY BEAM DEPOSITION
INTERFACES
LAYERS
NICKEL
NICKEL SILICIDES
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICA
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
VACUUM COATING
X-RAY DIFFRACTION
X-RAY SPECTRA
X-RAY SPECTROSCOPY