Improved optical and electrical properties of 200 MeV Ag{sup 15+} irradiated 3 wt% 'Li' doped MoO{sub 3} thin film
Abstract
The lithium (3 wt%) doped MoO{sub 3} thin film was prepared by spray deposition onto ITO substrate at 325 Degree-Sign C. The film of thickness 577 nm was irradiated with 200 MeV Ag{sup 15+} ion beams at a fluence of 5 Multiplication-Sign 10{sup 12} ions/cm{sup 2}. The XRD pattern confirmed that the pristine film is polycrystalline with orthorhombic symmetry. Upon irradiation, the film turned amorphous. The sharp Raman peak in pristine film at 993 cm{sup -1} is due to the terminal oxygen of {alpha}-MoO{sub 3} phase. Optical transparency of the film increased upon irradiation. Large red shift was observed in both direct and indirect band gaps. Electrical transport property study shows that the carrier concentration increased by one order for the irradiated film.
- Authors:
-
- Department of Physics, Presidency College, Chennai - 600005 (India)
- Center for Condensed Matter Sciences, National Taiwan University, Taipei - 10617, Taiwan (China)
- Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai - 600025 (India)
- Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)
- Interuniversity Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110 067 (India)
- Publication Date:
- OSTI Identifier:
- 22116013
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 1512; Journal Issue: 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CARRIER DENSITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ION BEAMS; IRRADIATION; LITHIUM COMPOUNDS; MEV RANGE; MOLYBDENUM OXIDES; MULTICHARGED IONS; OPACITY; ORTHORHOMBIC LATTICES; POLYCRYSTALS; RADIATION EFFECTS; RAMAN SPECTRA; SILVER IONS; SPRAYED COATINGS; THIN FILMS; X-RAY DIFFRACTION
Citation Formats
Kovendhan, M., Mohan, R., Joseph, D. Paul, Manimuthu, P., Venkateswaran, C., Sambasivam, S., Singh, J. P., and Asokan, K. Improved optical and electrical properties of 200 MeV Ag{sup 15+} irradiated 3 wt% 'Li' doped MoO{sub 3} thin film. United States: N. p., 2013.
Web. doi:10.1063/1.4791193.
Kovendhan, M., Mohan, R., Joseph, D. Paul, Manimuthu, P., Venkateswaran, C., Sambasivam, S., Singh, J. P., & Asokan, K. Improved optical and electrical properties of 200 MeV Ag{sup 15+} irradiated 3 wt% 'Li' doped MoO{sub 3} thin film. United States. https://doi.org/10.1063/1.4791193
Kovendhan, M., Mohan, R., Joseph, D. Paul, Manimuthu, P., Venkateswaran, C., Sambasivam, S., Singh, J. P., and Asokan, K. 2013.
"Improved optical and electrical properties of 200 MeV Ag{sup 15+} irradiated 3 wt% 'Li' doped MoO{sub 3} thin film". United States. https://doi.org/10.1063/1.4791193.
@article{osti_22116013,
title = {Improved optical and electrical properties of 200 MeV Ag{sup 15+} irradiated 3 wt% 'Li' doped MoO{sub 3} thin film},
author = {Kovendhan, M. and Mohan, R. and Joseph, D. Paul and Manimuthu, P. and Venkateswaran, C. and Sambasivam, S. and Singh, J. P. and Asokan, K.},
abstractNote = {The lithium (3 wt%) doped MoO{sub 3} thin film was prepared by spray deposition onto ITO substrate at 325 Degree-Sign C. The film of thickness 577 nm was irradiated with 200 MeV Ag{sup 15+} ion beams at a fluence of 5 Multiplication-Sign 10{sup 12} ions/cm{sup 2}. The XRD pattern confirmed that the pristine film is polycrystalline with orthorhombic symmetry. Upon irradiation, the film turned amorphous. The sharp Raman peak in pristine film at 993 cm{sup -1} is due to the terminal oxygen of {alpha}-MoO{sub 3} phase. Optical transparency of the film increased upon irradiation. Large red shift was observed in both direct and indirect band gaps. Electrical transport property study shows that the carrier concentration increased by one order for the irradiated film.},
doi = {10.1063/1.4791193},
url = {https://www.osti.gov/biblio/22116013},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1512,
place = {United States},
year = {Tue Feb 05 00:00:00 EST 2013},
month = {Tue Feb 05 00:00:00 EST 2013}
}