In-situ study of the growth of CuO nanowires by energy dispersive X-ray diffraction

Journal Article · Tue Feb 05 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4791033· OSTI ID:22115987

Srivastava, Himanshu; Ganguli, Tapas; Deb, S. K. ^[1]; Sant, Tushar; Poswal, Himanshu; Sharma, S. M. ^[2]

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1. Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced technology, Indore-452013 (India)
2. High Pressure and Synchrotron Physics Division, Bhabha Atomic Research Centre, Mumbai (India)

Growth of CuO nanowires by annealing method has been studied in-situ by grazing incidence Energy Dispersive X-ray Diffraction (EDXRD) technique on Indus-2. It was observed that Cu slowly oxidized to Cu{sub 2}O and finally to CuO. The data was taken as a function of time at two annealing temperatures 500 Degree-Sign C where nanowires form and 300 Degree-Sign C where nanowires don't form. We found that the strain in the CuO layer may be a principal factor for the spontaneous growth of nanowires in annealing method.

• OSTI ID: 22115987
• Journal Information: AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ANNEALING
COPPER OXIDES
CRYSTAL GROWTH
FABRICATION
GRAZING INCIDENCE TOMOGRAPHY
INDUS-2
LAYERS
QUANTITATIVE CHEMICAL ANALYSIS
QUANTUM WIRES
STRAINS
TIME DEPENDENCE
X-RAY DIFFRACTION
X-RAY FLUORESCENCE ANALYSIS