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Title: Studies of thin films of Ti- Zr -V as non-evaporable getter films prepared by RF sputtering

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4791277· OSTI ID:22113519

Non-Evaporable Getter (NEG) films of the Ti-Zr-V prepared on stainless steel substrates by Radio Frequency sputtering. To observe its getter behavior at the lowest activation temperature, the sample is heated continuously at different temperatures (100 Degree-Sign C, 150 Degree-Sign C, 200 Degree-Sign C and 250 Degree-Sign C) for 2 hours. The changes of the surface chemical composition at different temperaturesare analyzed by using XPS and SEM (Scanning Electron Microscopy) techniques. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy (EDX). The in-situ XPS measurements of the activated getter films show the disappearance of the superficial oxide layer through the variation in the oxygen stoichiometry during thermal activation. Results of these studies show that the deposited films of Ti-Zr-V could be used as NEG to produce extreme high vacuum.

OSTI ID:
22113519
Journal Information:
AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English