skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Strong nonlinear electron multiplication without impact ionization in dielectric nanoparticles embedded in optical materials

Journal Article · · Physics of Plasmas
DOI:https://doi.org/10.1063/1.4791662· OSTI ID:22113438
 [1]
  1. Universite de Bordeaux-CNRS-CEA, Centre Lasers Intenses et Applications, UMR 5107, 351 Cours de la Liberation, 33405 Talence (France)

The interaction of a dielectric nano-particle or nano-defect, embedded in the bulk of an optical material, with an intense and short laser pulse is addressed. Due to the finite size of the target and the possible large production of electrons in the conduction band, large electric field enhancement or surintensity may be induced inside the particle. Since ionization rates also depend on the instantaneous electric field, a strong time-dependent connection between electron production and surintensity may take place. Such a connection is shown to possibly lead to a nonlinear temporal increase in the free electron density relevant from an avalanche process, called optical avalanche, similar to the one induced by electron impact ionization. However, the present build-up in the electron density clearly exhibits more nonlinear features than traditional collisional avalanche, which is shown to induce an exponential growth of the density: when the optical avalanche is engaged, the temporal electron evolution exhibits an explosive behavior. That leads to a nanometric plasma at solid density whose subsequent laser heating may lead locally to matter under extreme conditions. Furthermore, we show that the defect induces a change in the ionization mechanism in the course of interaction: a transition from multiphoton to tunnel ionization may take place.

OSTI ID:
22113438
Journal Information:
Physics of Plasmas, Vol. 20, Issue 2; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1070-664X
Country of Publication:
United States
Language:
English