Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers
- St.-Petersburg State University (Russian Federation)
The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is typical of bonded structures, is formed on the basis of a square network of screw dislocations and contains a system of unidirectional 60 Degree-Sign zigzag-shaped dislocations. It is established that such dislocation networks are flat in structures with an azimuthal misorientation of wafers exceeding 2 Degree-Sign , whereas they are three-dimensional at smaller misorientation angles. A unique network of another type is formed only by 60 Degree-Sign dislocations, the majority of which are extended along one direction, which does not coincide with the Left-Pointing-Angle-Bracket 110 Right-Pointing-Angle-Bracket directions in the boundary plane and has a number of specific features, the explanation of which is impossible within the framework of conventional representations.
- OSTI ID:
- 22105558
- Journal Information:
- Semiconductors, Vol. 47, Issue 2; Conference: Silicon 2012: 9. international conference 'Silicon-2012', St. Petersburg (Russian Federation), 9-13 Jul 2012, 8. school for young scientists, St. Petersburg (Russian Federation), 9-13 Jul 2012; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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