Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

Journal Article · Fri Feb 15 00:00:00 EST 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613020036· OSTI ID:22105553

Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu. ^[1]

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1. Russian Scientific Center 'Kurchatov Institute' (Russian Federation)

Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

• OSTI ID: 22105553
• Journal Information: Semiconductors, Vol. 47, Issue 2; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FILMS
INTERFACES
ION BEAMS
ION IMPLANTATION
LAYERS
RECRYSTALLIZATION
SAPPHIRE
SILICON
SILICON IONS
SUBSTRATES
X-RAY DIFFRACTION