Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

Journal Article · Mon Apr 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613040167· OSTI ID:22105527

Kozhanova, Yu. V. ^[1]

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1. St. Petersburg State Polytechnical University (Russian Federation)

Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

• OSTI ID: 22105527
• Journal Information: Semiconductors, Vol. 47, Issue 4; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DEFECTS
DOPED MATERIALS
EUROPIUM IONS
EXCITATION
GALLIUM NITRIDES
MAGNETIC FIELDS
METASTABLE STATES
PARAMAGNETISM
PHOTOLUMINESCENCE
PHOTONS
QUANTUM WELLS
SAMARIUM IONS
SPECTRA
SULFUR IONS