Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions
Journal Article
·
· Journal of Applied Physics
- Electronic Engineering Department, Tohoku University, Sendai 890-8579 (Japan)
- Iwate Industrial Research Institute, Morioka 020-0852 (Japan)
Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co{sub 3}Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 Degree-Sign C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 {Omega} cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co{sub 3}Pt surface oxidation was discussed.
- OSTI ID:
- 22102396
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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