Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

Journal Article · Tue May 07 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4803130· OSTI ID:22102381

Perez-Tomas, A.; Fontsere, A.; Llobet, J. ^[1]; Placidi, M. ^[2]; Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. ^[3]; Baron, N. ^[3]

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1. IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain)
2. IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain)
3. CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

• OSTI ID: 22102381
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ALUMINIUM COMPOUNDS
BEAMS
BREAKDOWN
ELECTRIC CONDUCTIVITY
EV RANGE
GALLIUM NITRIDES
HETEROJUNCTIONS
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TRANSISTORS
TRAPS