Dual radio frequency plasma source: Understanding via electrical asymmetry effect

Journal Article · Sun Apr 21 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4801874· OSTI ID:22102353

Bora, B. ^[1]; Bhuyan, H.; Favre, M.; Wyndham, E. ^[2]; Wong, C. S. ^[3]

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1. Departamento de Plasma Termonuclear, Comision Chilena de Energia Nuclear (CCHEN), Casilla 188-D, Santiago (Chile)
2. Departamento de Fisica, Pontificia Universidad Catolica de Chile, Casilla 306, Santiago 22 (Chile)
3. Plasma Technology Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

On the basis of the global model, the influences of driving voltage and frequency on electron heating in geometrically symmetrical dual capacitively coupled radio frequency plasma have been investigated. Consistent with the experimental and simulation results, non-monotonic behavior of dc self bias and plasma heating with increasing high frequency is observed. In addition to the local maxima of plasma parameters for the integer values of the ratio between the frequencies ({xi}), ourstudies also predict local maxima for odd integer values of 2{xi} as a consequence of the electrical asymmetry effect produced by dual frequency voltage sources.

• OSTI ID: 22102353
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ASYMMETRY
PLASMA
PLASMA HEATING
RADIOWAVE RADIATION
RF SYSTEMS
SIMULATION