Interfacial chemical bonding state and band alignment of CaF{sub 2}/hydrogen-terminated diamond heterojunction
- Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
CaF{sub 2} films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF{sub 2}/H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF{sub 2}/H-diamond heterointerface. Valence and conductance band offsets of the CaF{sub 2}/H-diamond heterojunciton are determined to be 3.7 {+-} 0.2 and 0.3 {+-} 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF{sub 2}/H-diamond heterojunciton for the development of high power and high frequency field effect transistors.
- OSTI ID:
- 22102320
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 12; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond
Interfacial band alignment and structural properties of nanoscale TiO{sub 2} thin films for integration with epitaxial crystallographic oriented germanium