Formation of epitaxial Co{sub 1-x}Ni{sub x}Si{sub 2} nanowires on thin-oxide-capped (001)Si

Journal Article · Thu Feb 28 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4793585· OSTI ID:22102287

Li, Wun-Shan; Lee, Chung-Yang; Liu, Chun-Yi; Chu, Yen-Chang; Chen, Sheng-Yu; Chen, Lih-Juann ^[1]

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1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

Epitaxial Co{sub 1-x}Ni{sub x}Si{sub 2} alloy nanowires have been grown on (001)Si substrates by a combination of reactive deposition epitaxy and oxide-mediated epitaxy. The thin native oxide layer can serve as a diffusion barrier to diminish the flux of metal atoms from the top of oxide layer to Si surface and promote the growth of nanowires. The elemental distributions of Ni and Co in nanowires were determined by energy dispersive spectroscopy in a transmission electron microscope. The factors that cause the distributions of Ni and Co in nanowires were discussed.

• OSTI ID: 22102287
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 8; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMS
COBALT ALLOYS
DIFFUSION BARRIERS
DISTRIBUTION
LAYERS
METALS
NICKEL ALLOYS
QUANTUM WIRES
SILICON ALLOYS
SPECTROSCOPY
SUBSTRATES
SURFACES
TERNARY ALLOY SYSTEMS
TRANSMISSION ELECTRON MICROSCOPY
VACUUM COATING
VAPOR PHASE EPITAXY
X RADIATION