Plasma processing of low-k dielectrics
- IMEC, Leuven (Belgium)
- GLOBALFOUNDRIES, Dresden (Germany)
- INTEL Corporation, Chandler, Arizona 85226 (United States)
- Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow (Russian Federation)
- University of Texas at Austin, Texas 78758 (United States)
This paper presents an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology. The paper summarizes the major achievements accomplished during the last 10 years. It includes analysis of advanced experimental techniques that have been used, which are most appropriate for low-k patterning and resist strip, selection of chemistries, patterning strategies, masking materials, analytical techniques, and challenges appearing during the integration. Detailed discussions are devoted to the etch mechanisms of low-k materials and their degradation during the plasma processing. The problem of k-value degradation (plasma damage) is a key issue for the integration, and it is becoming more difficult and challenging as the dielectric constant of low-k materials scales down. Results obtained with new experimental methods, like the small gap technique and multi-beams systems with separated sources of ions, vacuum ultraviolet light, and radicals, are discussed in detail. The methods allowing reduction of plasma damage and restoration of dielectric properties of damaged low-k materials are also discussed.
- OSTI ID:
- 22102230
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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