K-shell spectroscopy of silicon ions as diagnostic for high electric fields

Journal Article · Thu Nov 15 00:00:00 EST 2012 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4767452· OSTI ID:22093984

Loetzsch, R.; Jaeckel, O.; Hoefer, S.; Kaempfer, T.; Uschmann, I.; Kaluza, M. C. ^[1]; Polz, J. ^[2]; Foerster, E. ^[1]; Stambulchik, E.; Kroupp, E.; Maron, Y. ^[3]

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1. Helmholtz-Institut Jena, Helmholtzweg 4, D-07743 Jena (Germany)
2. Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany)
3. Faculty of Physics, Weizmann Institute of Science, P.O. Box 26, Rehovot 76100 (Israel)

We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in {mu}m thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hamos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.

• OSTI ID: 22093984
• Journal Information: Review of Scientific Instruments, Vol. 83, Issue 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE-COUPLED DEVICES
CRYSTALS
DETECTION
ELECTRIC FIELDS
EMISSION
K SHELL
LASER RADIATION
LAYERS
LIGHT TRANSMISSION
PLASMA DENSITY
SEMICONDUCTOR MATERIALS
SILICON IONS
SIMULATION
SPECTRA
SPECTROMETERS
SPECTROSCOPY
X RADIATION
X-RAY SOURCES