Influence of ion source configuration and its operation parameters on the target sputtering and implantation process
- Nagata Seiki Co, 8-2, Kamisuwa, Tsubame-shi, Niigata-ken, 959-0181 (Japan)
- Nagaoka University of Technology, Nagaoka, 940-2188 (Japan)
In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to {alpha}-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N{sub 2}-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.
- OSTI ID:
- 22093624
- Journal Information:
- Review of Scientific Instruments, Vol. 83, Issue 6; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARBON IONS
CONFIGURATION
DEPOSITION
ELECTRIC POTENTIAL
GASES
GUNS
HARDNESS
ION BEAMS
ION IMPLANTATION
ION SOURCES
IRON
KEV RANGE
MAGNETIC FIELDS
PLASMA
PRESSURE RANGE GIGA PA
SPUTTERING
SURFACES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY