Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

Journal Article · Mon Dec 24 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4773512· OSTI ID:22089636

Lin, Li; Jijun, Qiu; Binbin, Weng; Zijian, Yuan; Zhisheng, Shi ^[1]; Xiaomin, Li; Xiaoyan, Gan ^[2]; Sellers, Ian R. ^[3]

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1. School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States)
2. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)
3. Deparment of Physics, University of Oklahoma, Norman, Oklahoma 73019 (United States)

A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

• OSTI ID: 22089636
• Journal Information: Applied Physics Letters, Vol. 101, Issue 26; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
HETEROJUNCTIONS
LAYERS
LEAD SELENIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES