Improvement of (004) texturing by slow growth of Nd doped TiO{sub 2} films

Journal Article · Sat Dec 01 00:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4767361· OSTI ID:22089602

Ali, A.; Bhatti, A. S. ^[1]; Yassitepe, E. ^[2]; Ruzybayev, I. ^[3]; Ismat Shah, S. ^[2]

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1. Centre for Micro and Nano Devices (CMND), Department of Physics, COMSATS Institute of Information Technology, Islamabad 44000 (Pakistan)
2. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States)
3. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)

In this work, we present preferred (004) texturing of sputter deposited titanium dioxide (TiO{sub 2}) films on glass substrates as a consequence of Nd doping at very slow growth rate. Nd concentration was varied from 0.0 to 2.0 atomic percent (at. %) in TiO{sub 2} thin films deposited under identical growth conditions, i.e., the growth rate of 0.6 A/s and at 500 Degree-Sign C. At 2 at. % Nd, complete texturing along (004) plane was observed, as indicated by the X-ray diffraction analyses. Morphology of the deposited TiO{sub 2} films from pure to 2 at. % Nd doped TiO{sub 2} films showed faceted to planar growth. Visualization of electrical and structural analysis (VESTA) software revealed that the change in the morphology was due to preferential growth in (004) orientation. Raman spectroscopy highlighted the phonon confinement in the Eg mode, and a red shift was observed due to an increase in the anti-symmetry in bonding with increased Nd concentration. XPS results confirmed the variation in oxygen vacancy concentration along with the reduction of Ti and Nd valance states with the change in the dopant concentration. Our experiments confirmed that the substitution of Nd at Ti sites was responsible for texturing in (004) orientation and this was possible by growing films at a very slow rate.

• OSTI ID: 22089602
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONFINEMENT
CRYSTALS
DOPED MATERIALS
NEODYMIUM ADDITIONS
OXYGEN
PHONONS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RED SHIFT
SEMICONDUCTOR MATERIALS
SPUTTERING
SURFACES
SYMMETRY
THIN FILMS
TITANIUM OXIDES
VACANCIES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY