Influence of growth and annealing conditions on low-frequency magnetic 1/f noise in MgO magnetic tunnel junctions
- CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)
Magnetic 1/f noise is compared in magnetic tunnel junctions with electron-beam evaporated and sputtered MgO tunnel barriers in the annealing temperature range 350 - 425 Degree-Sign C. The variation of the magnetic noise parameter ({alpha}{sub mag}) of the reference layer with annealing temperature mainly reflects the variation of the pinning effect of the exchange-bias layer. A reduction in {alpha}{sub mag} with bias is associated with the bias dependence of the tunneling magnetoresistance. The related magnetic losses are parameterized by a phase lag {epsilon}, which is nearly independent of bias especially below 100 mV. The similar changes in magnetic noise with annealing temperature and barrier thickness for two types of MgO magnetic tunnel junctions indicate that the barrier layer quality does not affect the magnetic losses in the reference layer.
- OSTI ID:
- 22089570
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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