Ge/SrTiO{sub 3}(001): Correlation between interface chemistry and crystallographic orientation
- Universite de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France)
- Synchrotron SOLEIL (TEMPO beamline), l'Orme des Merisiers, Saint-Aubin, 91192 Gif-sur-Yvette (France)
In this work, the desorption of a submonolayer deposit of Ge on SrTiO{sub 3}(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such 'surface energy driven' crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO{sub 3} system.
- OSTI ID:
- 22089563
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ADHESION
CORRELATIONS
CRYSTALLOGRAPHY
DESORPTION
ELECTRON DIFFRACTION
EPITAXY
GERMANIUM
INTERFACES
LAYERS
MOLECULAR STRUCTURE
ORIENTATION
PEROVSKITE
REFLECTION
SOFT X RADIATION
STRONTIUM TITANATES
SURFACE ENERGY
SURFACES
X-RAY PHOTOELECTRON SPECTROSCOPY