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Title: Ge/SrTiO{sub 3}(001): Correlation between interface chemistry and crystallographic orientation

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4764510· OSTI ID:22089563
; ; ; ; ; ; ; ;  [1]; ; ;  [2]
  1. Universite de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France)
  2. Synchrotron SOLEIL (TEMPO beamline), l'Orme des Merisiers, Saint-Aubin, 91192 Gif-sur-Yvette (France)

In this work, the desorption of a submonolayer deposit of Ge on SrTiO{sub 3}(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such 'surface energy driven' crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO{sub 3} system.

OSTI ID:
22089563
Journal Information:
Journal of Applied Physics, Vol. 112, Issue 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English