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Title: Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.
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Publication Date:
OSTI Identifier:22089495
Resource Type:Journal Article
Resource Relation:Journal Name: Journal of Applied Physics; Journal Volume: 112; Journal Issue: 8; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:United States
Language:English
Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; DIFFUSION; ENERGY SPECTRA; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE