Annealing studies of heteroepitaxial InSbN on GaAs grown by molecular beam epitaxy for long-wavelength infrared detectors

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4759321· OSTI ID:22089487

Patra, Nimai C.; Bharatan, Sudhakar ^[1]; Jia, Li; Iyer, Shanthi ^[1]

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1. Electrical and Computer Engineering, North Carolina A and T State University, Greensboro, North Carolina 27411 (United States)

We report the effect of annealing on the structural, vibrational, electrical, and optical properties of heteropepitaxially grown InSbN epilayers on GaAs substrate by molecular beam epitaxy for long-wavelength infrared detector applications. As-grown epilayers exhibited high N incorporation in the both substitutional and interstitial sites, with N induced defects as evidenced from high resolution x-ray diffraction, secondary ion mass spectroscopy, and room temperature (RT) micro-Raman studies. The as-grown optical band gap was observed at 0.132 eV ({approx}9.4 {mu}m) and the epilayer exhibited high background carrier concentration at {approx}10{sup 18} cm{sup -3} range with corresponding mobility of {approx}10{sup 3} cm{sup 2}/Vs. Ex situ and in situ annealing at 430 Degree-Sign C though led to the loss of N but improved InSb quality due to effective annihilation of N related defects and other lattice defects attested to enhanced InSb LO phonon modes in the corresponding Raman spectra. Further, annealing resulted in the optical absorption edge red shifting to 0.12 eV ({approx}10.3 {mu}m) and the layers were characterized by reduced background carrier concentration in the {approx}10{sup 16} cm{sup -3} range with enhanced mobility in {approx}10{sup 4} cm{sup 2}/Vs range.

• OSTI ID: 22089487
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 8; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANTIMONY COMPOUNDS
CARRIER DENSITY
CRYSTAL DEFECTS
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
INTERSTITIALS
ION MICROPROBE ANALYSIS
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
RAMAN SPECTRA
RED SHIFT
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION