Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy
- Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
The effect of nitrogen concentration on the optical properties of InGaP(N) epilayer was investigated. The temperature dependence of the photoluminescence (PL) peak energy of InGaPN (N = 1%) epilayer around room temperature was found to be almost one-half of that of InGaP epilayer. The incorporation of N causes the reduction of the coupling constant for the electron-phonon interaction, leading to the reduced temperature dependence of the PL peak shift. Thermal activation energy, which is deduced from the Arrhenius plot of PL intensity, was decreased by N incorporation. The reduced PL quenching is discussed in terms of the changes in the band alignment at the InGaPN/GaAs heterointerface by the increase in the N concentration.
- OSTI ID:
- 22089450
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 6; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ACTIVATION ENERGY
ALIGNMENT
COUPLING CONSTANTS
DISTRIBUTION
ELECTRON-PHONON COUPLING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
QUENCHING
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K