Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

Journal Article · Sat Sep 15 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4754319· OSTI ID:22089444

Liu, H. F.; Tan, C. C.; Dalapati, G. K.; Chi, D. Z. ^[1]

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1. Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

Al{sub 0.278}In{sub 0.722}N thin films have been grown on p-type Si(001) and c-plane sapphire substrates by employing radio-frequency magnetron-sputter deposition at elevated temperatures. High-resolution x-ray diffraction, as well as pole-figure measurements, reveals no phase separation of the thin films. The Al{sub 0.278}In{sub 0.722}N film grown on p-Si(001) substrate is a typical fiber-texture with AlInN(0001)//Si(001) while that on the c-sapphire exhibits the onset of epitaxy. Microscopic studies reveal that the growth is dominated by a columnar mechanism and the average columnar grain diameter is about 31.5 and 50.8 nm on p-Si(001) and c-sapphire substrates, respectively. Photoluminescence at room-temperature exhibits a strong emission peak at 1.875 eV, smaller than the optical absorption edge (2.102 eV) but larger than the theoretical bandgap energy (1.70 eV), which is attributable to the band-filling effect, as is supported by the high electron density of 4.5 Multiplication-Sign 10{sup 20} cm{sup -3}. The n-Al{sub 0.278}In{sub 0.722}N/p-Si(001) heterostructure is tested for solar cells and the results are discussed based on the I-V characteristics and their fittings.

• OSTI ID: 22089444
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 6; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ALUMINIUM COMPOUNDS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
ENERGY GAP
HETEROJUNCTIONS
INDIUM COMPOUNDS
MAGNETRONS
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTOVOLTAIC EFFECT
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION