Engineering shallow spins in diamond with nitrogen delta-doping

Journal Article · Mon Aug 20 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4748280· OSTI ID:22089396

Ohno, Kenichi; Joseph Heremans, F.; Bassett, Lee C.; Myers, Bryan A.; Toyli, David M.; Bleszynski Jayich, Ania C.; Palmstrom, Christopher J.; Awschalom, David D. ^[1]

---

1. Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 to 100 nm display long spin coherence times, T{sub 2} > 100 {mu}s at d = 5 nm and T{sub 2} > 600 {mu}s at d {>=} 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.

• OSTI ID: 22089396
• Journal Information: Applied Physics Letters, Vol. 101, Issue 8; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACCURACY
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DIAMONDS
DOPED MATERIALS
NITROGEN ADDITIONS
PLASMA
SPIN
SURFACES