Extraction of negative ions from pulsed electronegative capacitively coupled plasmas
- Applied Materials Inc., 974 E. Arques Avenue, M/S 81312, Sunnyvale, California 94085 (United States)
Charge buildup during plasma etching of dielectric features can lead to undesirable effects, such as notching, bowing, and twisting. Pulsed plasmas have been suggested as a method to achieve charge-free plasma etching. In particular, electronegative plasmas are attractive as the collapse of the plasma potential during the after-glow period of pulsed capacitively coupled plasmas (CCPs) can allow for extraction of negative ions into the feature. The extraction of negative ions in the after-glow of pulsed CCPs sustained in CF{sub 4} containing gas mixtures is computationally investigated. In this paper, the consequences of pulse frequency and gas chemistry on negative ion flux to the wafer are discussed. A low negative ion flux to the wafer was observed only in the late after-glow period of low pulse frequencies. The negative ion flux was found to significantly increase with the addition of highly electronegative gases (such as thermally attaching Cl{sub 2}) even at a high pulse frequency of 10 kHz. As the production of negative ions during the after-glow diminishes, alternative strategies to enhance the flux were also pursued. The flux of negative ions was found to increase by the addition of a pulsed dc voltage on the top electrode that is 180 Degree-Sign out-of-phase with the rf pulse.
- OSTI ID:
- 22089371
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 3; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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