Effects of Ga on the growth of InN on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

Journal Article · Mon Jul 30 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4739941· OSTI ID:22089327

Cho, Yong Jin; Riechert, Henning; Brandt, Oliver ^[1]; Korytov, Maxim; Albrecht, Martin ^[2]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
2. Leibniz-Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

We compare the structural properties of InN and In{sub 0.95}Ga{sub 0.05}N films grown on O-face ZnO(0001) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In{sub 0.95}Ga{sub 0.05}N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450{sup Degree-Sign }C or below.

• OSTI ID: 22089327
• Journal Information: Applied Physics Letters, Vol. 101, Issue 5; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
FILMS
GALLIUM ADDITIONS
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PLASMA
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
ZINC OXIDES