Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks
- Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237 (Japan)
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Wakamatsu-ku, Kitakyushu 808-0196 (Japan)
Spike-timing-dependent synaptic plasticity (STDP) is demonstrated in a synapse device based on a ferroelectric-gate field-effect transistor (FeFET). STDP is a key of the learning functions observed in human brains, where the synaptic weight changes only depending on the spike timing of the pre- and post-neurons. The FeFET is composed of the stacked oxide materials with ZnO/Pr(Zr,Ti)O{sub 3} (PZT)/SrRuO{sub 3}. In the FeFET, the channel conductance can be altered depending on the density of electrons induced by the polarization of PZT film, which can be controlled by applying the gate voltage in a non-volatile manner. Applying a pulse gate voltage enables the multi-valued modulation of the conductance, which is expected to be caused by a change in PZT polarization. This variation depends on the height and the duration of the pulse gate voltage. Utilizing these characteristics, symmetric and asymmetric STDP learning functions are successfully implemented in the FeFET-based synapse device by applying the non-linear pulse gate voltage generated from a set of two pulses in a sampling circuit, in which the two pulses correspond to the spikes from the pre- and post-neurons. The three-terminal structure of the synapse device enables the concurrent learning, in which the weight update can be performed without canceling signal transmission among neurons, while the neural networks using the previously reported two-terminal synapse devices need to stop signal transmission for learning.
- OSTI ID:
- 22089250
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ASYMMETRY
DENSITY
FERROELECTRIC MATERIALS
FIELD EFFECT TRANSISTORS
FILMS
MODULATION
NEURAL NETWORKS
OXYGEN COMPOUNDS
PLASTICITY
POLARIZATION
PZT
RUTHENIUM COMPOUNDS
SAMPLING
STRONTIUM COMPOUNDS
SYMMETRY
TRANSMISSION
ZINC OXIDES