Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

Journal Article · Mon Oct 01 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4756896· OSTI ID:22080471

Placidi, E ^[1]; Arciprete, F; Balzarotti, A; Patella, F ^[2]

---

1. Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)
2. Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy (Italy)

The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

• OSTI ID: 22080471
• Journal Information: Applied Physics Letters, Vol. 101, Issue 14; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
AGGLOMERATION
ASPECT RATIO
DROPLETS
GALLIUM ARSENIDES
LAYERS
LIQUIDS
MANGANESE COMPOUNDS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SCALING
SCALING LAWS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TRANSFORMATIONS