Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO{sub 3} interface

Journal Article · Mon Sep 24 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4755842· OSTI ID:22080466

Sun, J; Jia, C H; Li, G Q; Zhang, W F ^[1]

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1. Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475004 (China)

The resistive switching behaviors of indium (In)/Nb:SrTiO{sub 3} (NSTO) with different metal/semiconductor contacts are investigated. The In electrodes with the Schottky contacts are fabricated on NSTO surface using direct current reactive magnetron sputtering, and the fresh In is directly pressed to form the Ohmic contact. The device with one Schottky barrier displays a normal bipolar resistive switching (BRS) behavior, while the device with two Schottky barriers shows an abnormal BRS behavior. The results demonstrate that the injection and trapping or detrapping of carriers near the interface between the metal electrode and semiconductor are closely related to the resistive switching performance.

• OSTI ID: 22080466
• Journal Information: Applied Physics Letters, Vol. 101, Issue 13; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
DIRECT CURRENT
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
INDIUM
INJECTION
INTERFACES
MAGNETRONS
NIOBIUM ADDITIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SPUTTERING
STRONTIUM TITANATES
SURFACES
TRAPPING