Valence band offset at Al{sub 2}O{sub 3}/In{sub 0.17}Al{sub 0.83}N interface formed by atomic layer deposition
- Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628 (Japan)
The valence band offset, {Delta}E{sub V}, at an Al{sub 2}O{sub 3}/In{sub 0.17}Al{sub 0.83}N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, {Delta}E{sub CL}, between O 1s and In 4d resulted in {Delta}E{sub V} = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, {theta}. However, {Delta}E{sub CL} and full width at half maximum of core-level spectra were dependent on {theta}, which indicated significant potential gradients in Al{sub 2}O{sub 3} and InAlN layers. An actual {Delta}E{sub V} of 1.2 eV was obtained considering the potential gradients.
- OSTI ID:
- 22080449
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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