Electronic structure of graphene oxide and reduced graphene oxide monolayers
- Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India)
Graphene oxide (GO) monolayers obtained by Langmuir Blodgett route and suitably treated to obtain reduced graphene oxide (RGO) monolayers were studied by photoelectron spectroscopy. Upon reduction of GO to form RGO C1s x-ray photoelectron spectra showed increase in graphitic carbon content, while ultraviolet photoelectron spectra showed increase in intensity corresponding to C2p-{pi} electrons ({approx}3.5 eV). X-ray excited Auger transitions C(KVV) and plasmon energy loss of C1s photoelectrons have been analyzed to elucidate the valence band structure. The effective number of ({pi}+{sigma}) electrons as obtained from energy loss spectra was found to increase by {approx}28% on reduction of GO.
- OSTI ID:
- 22080424
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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