Effect of proton bombardment on InAs dots and wetting layer in laser structures

Journal Article · Mon Jun 25 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4730964· OSTI ID:22080405

O'Driscoll, I; Blood, P; Smowton, P M; Sobiesierski, A ^[1]; Gwilliam, R ^[2]

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1. School of Physics and Astronomy, Cardiff University, Queens Buildings, The Parade, Cardiff CF24 3AA (United Kingdom)
2. Advanced Technology Institute, FEPS, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

The effect of proton bombardment on carrier lifetime and photoluminescence of InAs quantum dots was measured. Optical absorption and transmission electron microscopy show the dots retain their integrity under bombardment. A decrease in ground state photoluminescence with increasing dose is not explained by the decrease in dot carrier lifetime alone, but also by bombardment-induced non-radiative recombination in the wetting layer, which reduces the dot electron population at fixed excitation. To exploit the relative radiation immunity of quantum dots, it is necessary to maximise the dot density and capture probability per dot to minimize the effect of wetting layer recombination.

• OSTI ID: 22080405
• Journal Information: Applied Physics Letters, Vol. 100, Issue 26; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
CARRIER LIFETIME
DENSITY
EXCITATION
GROUND STATES
INDIUM ARSENIDES
INFRARED SPECTRA
LAYERS
PHOTOLUMINESCENCE
PROTON BEAMS
QUANTUM DOTS
RECOMBINATION
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY