The design and analysis of beam-membrane structure sensors for micro-pressure measurement
- The State Key Laboratory for Mechanical Manufacturing System, Xi'an Jiaotong University, Xi'an, Shannxi 710049 (China)
- DongFang Electric Corporation R and D Center Electric Power Design Institute, Chengdu, Sichuan 611731 (China)
This paper reports the design and analysis of a type of piezoresistive pressure sensor for micro-pressure measurement with a cross beam-membrane (CBM) structure. This new silicon substrate-based sensor has the advantages of a miniature structure and high sensitivity, linearity, and accuracy. By using the finite element method to analyze the stress distribution of the new structure and subsequently deducing the relationship between structural dimensions and mechanical performances, equations used to determine the CBM structure are established. Based on the CBM model and our stress and deflections equations, sensor fabrication is then performed on the silicon wafer via a process including anisotropy chemical etching and inductively coupled plasma. The structure's merits, such as linearity, sensitivity, and repeatability, have been investigated under the pressure of 5 kPa. Our results show that the precision of these equations is {+-}0.19%FS, indicating that this new small-sized structure offers easy preparation, high sensitivity, and high accuracy for micro-pressure measurement.
- OSTI ID:
- 22072289
- Journal Information:
- Review of Scientific Instruments, Vol. 83, Issue 4; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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