Single-qubit-gate error below 10{sup -4} in a trapped ion
Journal Article
·
· Physical Review. A
- National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)
With a {sup 9}Be{sup +} trapped-ion hyperfine-state qubit, we demonstrate an error probability per randomized single-qubit gate of 2.0(2)x10{sup -5}, below the threshold estimate of 10{sup -4} commonly considered sufficient for fault-tolerant quantum computing. The {sup 9}Be{sup +} ion is trapped above a microfabricated surface-electrode ion trap and is manipulated with microwaves applied to a trap electrode. The achievement of low single-qubit-gate errors is an essential step toward the construction of a scalable quantum computer.
- OSTI ID:
- 22068607
- Journal Information:
- Physical Review. A, Vol. 84, Issue 3; Other Information: (c) 2011 American Institute of Physics; Country of input: Syrian Arab Republic; ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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